Carrier Scattering in Metals and SemiconductorsElsevier, 2 дек. 2012 г. - Всего страниц: 478 The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental data. The subjects dealt with include: - electronic transport theory based on the test-particle and correlation-function concepts; - scattering by phonons, impurities, surfaces, magnons, dislocations, electron-electron scattering and electron temperature; - two-phonon scattering, spin-flip scattering, scattering in degenerate and many-band models. |
Содержание
| 1 | |
Chapter 2 Scattering | 35 |
Chapter 3 Electronphonon interaction | 63 |
Chapter 4 Scattering by longwavelength phonons in a simple band | 87 |
Chapter 5 Scattering by phonons in an anisotropic electron band | 109 |
Chapter 6 Electronelectron scattering and the electron temperature | 132 |
Chapter 7 Relaxation characteristics of kinetic effects | 168 |
Chapter 8 Twophonon processes | 201 |
Chapter 12 Scattering in a degenerate band and in a multiband model | 275 |
Chapter 13 Spinflip induced by spinorbit interaction | 306 |
Chapter 14 The effect of a magnetic field on scattering | 340 |
Chapter 15 Exchange and spin interaction | 390 |
Parameters of certain semiconductor materials | 426 |
References | 429 |
| 437 | |
| 443 | |
Chapter 9 Scattering by impurities | 215 |
Chapter 10 Scattering by dislocations | 241 |
Chapter 11 Scattering by a crystal surface | 253 |
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according to eq acoustic phonons amplitude angle anisotropy assumed atoms average axis band structure Bloch functions Boltzmann gas calculated carriers coefficient collisions conduction band constant corresponding cross section crystal deformation potential degenerate density detailed balance determined direction dislocation dispersion law distribution effect electrical resistivity emission energy relaxation equation equilibrium experimental factor Fermi gas field H germanium given by eq heavy holes Hence hole band impurities integral intraband isotropic model k-space k₁ lattice light holes macrofield magnetic field matrix element metals momentum relaxation obtain optical phonons orbits oscillations parameters particles passive region perturbation Phys polarization q₁ quantity quantization quasi-elastic quasi-particles resonance scattering event scattering probability screening sect semiconductors semimetals spin-flip spin-orbit interaction symmetry T₁ thermal tion transverse Umklapp processes valleys values vector velocity wave functions wavevector Δε εκ