 | Страниц: 982
...Effects of Traps on the MOS Capacitance, " IEEE Trans. Electronic Devices, vol. ED-12, p. 167, 1965. 4. EH Snow, AS Grove, BE Deal and CT Sah, "Ion Transport Phenomena ii Insulating Films, " Journ. Appl. Physics, vol. 36, p. 1664, 1965. 5. H. Dueling, E. Klausmann and... | |
 | P. Antognetti - 1983 - Страниц: 644
...BL Gregory and CW Gwyn, "Radiation Effects on Semiconductor Devices" Proc. IEEE 62 (1974) 1264. 51. EH Snow, AS Grove, BE Deal, and CT Sah, "Ion Transport...Phenomena in Insulating Films." J. Appl. Phys. 36 (1965) 1664. 52. BE Deal, US Patent No. 3,426,422, Feb 11, 1969. 53. Special issues on device radiation... | |
 | Chih-Tang Sah - 1991 - Страниц: 1044
...metal-oxide-semiconductor structures." J. Applied Physics 33(8). pp. 2458-2460, August 1964. [400.5] Edward H. Snow, AS Grove, BE Deal, and CT Sah. "Ion transport phenomena in insulating films," J. Applied Physics, 36(5), pp. 1664-1673, May 1965. [400.6] CT Sah, "Characteristics of the MOS Transistor,"... | |
 | Howard Huff - 2005 - Страниц: 740
...surface properties of oxidized silicon,” Philips Research Reports 20, pp. 578—594, Oct. 1965 2.9. EH Snow, AS Grove, BE Deal, and CT Sah, “Ion Transport Phenomena in Insulating Films,” J. App!. Phys. 36, 1664 (1965) 2.10. DR Kerr and DR Young, “Method of improving electrical characteristics... | |
 | Dieter K. Schroder - 2006 - Страниц: 800
..."Rapid and Precise Measurement of Platband Voltage," Rev. Sci. Instrum. 47, 632-634, May 1976. 26. EH Snow, AS Grove, BE Deal and CT Sah, "Ion Transport...in Insulating Films," J. Appl. Phys. 36, 1664-1673, May 1965. 27. WA Pliskin and RA Gdula, "Passivation and Insulation," in Handbook on Semiconductors,... | |
 | Narain Arora - 2007 - Страниц: 633
...pp. 655-660 (1976); JD Meindl, 'Ultralarge scale integration', ibid, ED-31, pp. 1555-1561 (1984). [3] EH Snow, AS Grove, BE Deal, and CT Sah, 'Ion transport...phenomena in insulating films', J. Appl. Phys., 36, pp. 1665-1673 (1965). [4] SM Sze, Ed., VLSI Technology, 2nd Ed. McGraw-Hill Book Company, New York,... | |
 | Carlos Galup-Montoro, M rcio Cherem Schneider - 2007 - Страниц: 445
...H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, Cambridge, UK, 1998. [13] EH Snow, AS Grove, BE Deal, and CT Sah, "Ion transport phenomena in insulating films," J. Appl. Phys., vol. 36, no. 5, pp. 1664-1673, May 1965. [14] EH Nicollian and JR Brews, MOS (Metal Oxide Semiconductor)... | |
 | Richard S. Tedlow - 2007 - Страниц: 612
...System," American Institute of Mining, Metallurgical and Petroleum Engineers, Transactions, 233 ( 1965); EH Snow, AS Grove, BE Deal, and CT Sah, "Ion Transport Phenomena in Insulating Films," Journal of Applied Physics, 36, no. 5 (May 1965); O. Leistiko Jr., AS Grove, and CT Sah, "Electron... | |
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EH Snow, AS Grove, BE Deal, and CT Sah, "Ion Transport Phenomena in Insulating Films, 