 | 1972 - Страниц: 1528
...more interesting . It is important that CuGaS 2 and CuInS 2 are direct bandgap semiconductors with the top of the valence band and the bottom of the conduction band at the r-point of the Brillouin zone. This implies a strong in. teraction of valence and conduction... | |
 | 1955 - Страниц: 526
...and Lax and their co-workers (12) and theoretical calculations by Herman (.73) are shown in Fig. 5. The top of the valence band and the bottom of the conduction TABLE II. Energy Gaps and Related Properties of Group IV Elements * Calculated from the experimental... | |
 | S. Flügge - 1956 - Страниц: 434
...closely with our main approach that we shall discuss them here : the nature of the energy levels at the top of the valence band and the bottom of the conduction band, and hence the nature of the current carried by electrons and holes; and the energy levels surrounding... | |
 | United States. National Aeronautics and Space Administration - 1965 - Страниц: 300
...laser levels are discussed. A scheme is proposed for laser action in covalent semiconductors where the top of the valence band and the bottom of the conduction band do not occur at the same value of k. The scheme consists of simultaneously tunneling electrons into... | |
 | C. Suryanarayana, M. Grant Norton - 1998 - Страниц: 302
...it is possible to control the energy of the band gap. If the semiconductor has a large band gap (ie, the top of the valence band and the bottom of the conduction band are separated by a large amount of energy), then thermal excitation of electrons becomes less probable... | |
 | Milton Ohring - 1998 - Страниц: 715
...conductive than bulk insulators. For one thing there are fuzzy electron-distribution tails at both the top of the valence band and the bottom of the conduction band. These extend into the normally state-free gap and overlap to create a broad continuum of electron states.... | |
 | Phillip A. Laplante - 1999 - Страниц: 738
...pertaining to the maintenance of a thermal unit on hot reserve. energy gap the width of the energy interval between the top of the valence band and the bottom of the conduction band. energy level one of the specific values possible for the energy of an electron in an atom or molecule.... | |
 | Holger T. Grahn - 1999 - Страниц: 212
...= (Ec — Ey)/2 + Ey = Ec/2 + Ey. The Fermi level of an intrinsic semiconductor is exactly located between the top of the valence band and the bottom of the conduction band at zero temperature. Since usually the effective mass of holes is larger than that one of electrons,... | |
 | G. P. Srivastava - 1999 - Страниц: 360
...n > 8 in the [001] case and for n > 12 in the [110] case. For these values of the layer index both the top of the valence band and the bottom of the conduction band are derived from the GaAs part of the superlattice, and the superlattice is referred to as type-I.... | |
 | Vladimir Vasilʹevich Mitin, Viacheslav Kochelap, Michael A. Stroscio - 1999 - Страниц: 670
...effect is known as the Burstein-Moss effect. Electrons and holes populate almost all energy states near the top of the valence band and the bottom of the conduction band, which makes phototransitions impossible in some spectral range near the fundamental absorption edge.... | |
| |
The energy difference between the top of the valence band and the bottom of the conduction band is called the band gap. 
